![]() The top surface is protected and covered using the Silicon dioxide layer (SiO2) with aluminum's metallization.ĬMOS has the least amount of power dissipation in the switching applications. The two P++ regions are diffused into the larger N++ region to form the PMOS transistor. The two smaller regions are a part of the NMOS transistor, while the third N++ region is a part of the PMOS transistor. The two N++ regions are small and the third N++ region is large. The substrate is of the P-type, and three N++ regions. The structure as shown consists of the NMOS transistor inverted on the top of the PMOS transistor. Similarly, the PMOS transistor has two P++ regions and an n-type substrate. It comprises the NMOS transistor that has N++ regions at the source and drain terminal and p-type substrate. The practical construction of the CMOS transistor is shown in the below image: The slow flow of holes makes the current controlled process of PMOS easy as compared to NMOS transistors. The channel is formed between the source and drain. The attraction of holes results in the formation of the channel called the p-channel. When a negative voltage is applied to the gate end of the PMOS, it repels the electrons. It has a substrate of n-type, which consists of majority carriers electrons. The symbol of the PMOS transistor is shown below: Hence, NMOS transistors are more rapid than PMOS transistors. The flow of electrons is fast as compared to holes. The n-channel consists of majority carriers electrons. It has a substrate of p-type, which consists of majority carriers holes. The symbol of the NMOS transistor is shown below: Let's discuss a short description of the NMOS and PMOS transistor before beginning with CMOS. Its manufacturing requires fewer steps as compared to the Bipolar Junction transistors.Īs discussed, CMOS is a combination of NMOS and PMOS transistors. The importance of CMOS in semiconductor technology is its low power dissipation and low operating currents. The CMOS transistors are used in various applications, such as amplifiers, switching circuits, logic circuits, Integrated circuit chips, microprocessors, etc. The NMOS and PMOS are the types of Metal Oxide Semiconductor Field Effect Transistors (MOSFET). The structure of CMOS was initially developed for high density and low power logic gates. CMOS or Complementary Metal Oxide Semiconductor is a combination of NMOS and PMOS transistors that operates under the applied electrical field.
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